General Chair

D. De Venuto (Politecnico di Bari and INFN Bari - Italy)

 

Steering Commitee

B. Courtois (BC Consulting, Grenoble-France)

E. Di Sciascio (Politecnico di Bari – Italy)

G. Gielen (University of Leuven-Belgium)

K. Makinwa (Delft University of Technology-TheNetherlands)

J. Rabaey (University of California at Berkeley, USA)

C. Van Hoof (IMEC Leuven-Belgium)

 

Scientific Commitee

L. Benini (ETHZ Switzerland & Univ. of Bologna-Italy)

E. Cantatore (Eindhoven Univ. of Technology-The Netherlands)

S. Carrara (EPFL Lausanne-Switzerland)

H. Casier (AMI Semiconductors, Bruxelles-Belgium)

D.R.S. Cumming (The University of Glasgow)

F. Docchio (Univ. di Brescia)

G. De Cesare (Univ. La Sapienza Roma-Italy)

D. Demarchi (IIT – Politecnico di Torino)

M. De Palma (INFN Bari - Italy)

L. Dilillo (LIRMM – France)

M. Kayal (EPFL Lausanne-Switzerland)

M. Magno (ETH Zurich, Switzerland)

L. Milor (Georgia Inst. of Technology US)

E. Nappi (INFN Bari -Italy)

M. J. Ohletz (ZMD AG-Germany)

J. Ohta (NAIST – Japan)

K. B. Ozanyan (Manchester University, UK)

E. Popovici (University College Cork Ireland)

L. Rufer (TIMA/ Univ. Grenoble-France)

M. Ruta (Politecnico di Bari – Italy)

M. Savino (Politecnico di Bari-Italy)

P. Siciliano (IMM-CNR Lecce-Italy)

R. Thewes (TU Berlin - Germany)

L. Torsi (Univ. di Bari-Italy)

B. Vigna (ST Microelectronics-Italy)

 

Local Commitee

V. F. Annese (Politecnico di Bari - Italy)

M. De Palma (INFN Bari - Italy)

F. Scioscia (Politecnico di Bari - Italy)

G. Loseto (Politecnico di Bari - Italy)